Structure-Dependent Subthreshold Swings for Double-gate MOSFETs
نویسندگان
چکیده
منابع مشابه
Structure-Dependent Subthreshold Swings for Double-gate MOSFETs
583 Abstract— In this paper, subthreshold swing characteristics have been presented for double-gate MOSFETs, using the analytical model based on series form of potential distribution. Subthreshold swing is very important factor for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec. The channel length L g is varied from 30nm to 100...
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ژورنال
عنوان ژورنال: Journal of information and communication convergence engineering
سال: 2011
ISSN: 2234-8255
DOI: 10.6109/jicce.2011.9.5.583